1.55 μm GaInAsP/InP Distributed Feedback Lasers

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概要

• 論文の詳細を見る

• Room temperature operation of 1.55 μm GaInAsP/InP distributed feedback lasers is reported. The laser was fabricated by a single LPE growth cycle on a corrugated substrate. Single longitudinal and transverse mode oscillation was observed up to 1.7 times the threshold current. The temperature dependence of lasing wavelength was about 0.09 nm/deg.

• 社団法人応用物理学会の論文
• 1981-07-05

著者

• Mikami Osamu

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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