GaAs Light Emitting Diodes Fabricated on SiO_2/Si Wafers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-07-20
著者
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Ohmachi Yoshiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nishioka Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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SHINODA Yukinobu
Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation
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Shinoda Yukinobu
Musashino Electrical Communication Laboratory
関連論文
- GaAs Light Emitting Diodes Fabricated on SiO_2/Si Wafers
- InGaAsP n-Channel Inversion-Mode MISFET
- Ion-Implanted n-Channel InP-IGFET and Its Low Frequency Characteristics
- Plasma Enhanced CVD Si_3N_4 Film Applied to InP Avalanche Photodiodes
- Life Test of GaAs DH Lasers at Room Temperature
- Cleaving Process of GaAs Wafers
- Rapid Degradation in GaAs/AlGaAs Lasers Caused by Process-Induced Defects
- CVD Al_2O_3 Films on III-V Binary Semiconductors
- Evaluation of GaAs/AlGaAs Double-Heterostructure Wafers and Lasers by X-ray Topography
- X-Ray Topographic Observations of Defects on the Interface of GaAs-Al_xGa_1-xAs Epitaxial Wafers