Ion-Implanted n-Channel InP-IGFET and Its Low Frequency Characteristics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-07-05
著者
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Ohmachi Yoshiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nishioka Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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NISHIOKA Takashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
関連論文
- GaAs Light Emitting Diodes Fabricated on SiO_2/Si Wafers
- Ion-Implanted n-Channel InP-IGFET and Its Low Frequency Characteristics
- Plasma Enhanced CVD Si_3N_4 Film Applied to InP Avalanche Photodiodes
- Cleaving Process of GaAs Wafers