InAlAs/AlAsSb Type II Multiple Quantum Well Layers Lattice-Matched to InP Grown by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
In_<0.52>Al_<0.48>As/AIAs_<0.56>Sb_<0.44> type II mtultiple quantum well (MQW) layers lattice-matched to InP substrates were grown by molecular beam epitaxy (MBE). High quality InAlAs/AlAsSb MQW layers were obtained by controlling As/Sb beams precisely and optimizing the V/III ratio during growth. Below-gap light emission at 0.90 -0.97 μm was observed at 77 K, which arises from the recombination between electrons in the InAlAs layers and holes in the AlAsS b layers across the type II heterointerface. The valence band discontinuuity AE is estimatedto be 0.28 eV from the InAlAs well width dependence of the emission energy.
- 社団法人応用物理学会の論文
- 1997-06-15
著者
-
Kawamura Yuichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
-
Kawamura Y
Fuji Electric Corporate Res. And Dev. Ltd. Kanagawa Jpn
-
INOUE Naohisa
Research Institute for Advanced Science and Technology, Osaka Prefecture University
-
Kamada A
Osaka Prefecture Univ. Osaka Jpn
-
Inoue Naohisa
Research Institute For Advanced Science And Technology Osaka Prefecture University
-
KURISU Hirokazu
College of Engineering, Osaka Prefecture University
-
YOSHIMATSU Kiyotsune
Research Institute for Advanced Science and Technology, Osaka Prefecture University
-
KAMADA Akihiro
Research Institute for Advanced Science and Technology, Osaka Prefecture University
-
NAITO Yoshihiro
College of Engineering, Osaka Prefecture University
-
Kurisu Hirokazu
College Of Engineering Osaka Prefecture University
-
Naito Yoshihiro
College Of Engineering Osaka Prefecture University
-
Yoshimatsu K
Osaka Prefecture Univ. Osaka Jpn
関連論文
- Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
- Compositional Disordering of In_Ga_As/In_Al_As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
- Si-Induced Disordering of In_Ga_As / In_Al_As Multiquantum Well Structures : Semiconductors and Semiconductor Devices
- Magnetic Quantum Oscillations in In_Ga_As/In_Al_As Multiquantum Well Observed by Millimeter Wave Responce
- Transport Properties in InP/InAlAs Type II Single Heterostructure
- Measurement of the Energy Spread of the Cold Relativistic Electron Beam Using Thomson Backscattering of a High Power CO_2 Laser
- Direct Measurement of the Energy Distribution of an Intense Relativistic Electron Beam
- Properties of In_Al_AS and In_Ga_AS/In_Al_AS Quantum Well Structures Grown on (111)B InP Substrates by Molecular Beam Epitaxy
- Optical Properties of an InGaAlAs/InP Type-II Superlattice
- Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy
- Electroabsorption in an AlInAs/InP Type II Superlattice
- Photoreflectance Characterization of Ordered/Disordered GaAs_Sb_ layers Grown on InP Substrates by Molecular Beam Epitaxy
- Observation of Shrinkage Process by Annealing of Grown-in Defect in Cz-Si Crystal
- Observation of Low Chirp Modulation in Long Wavelength InGaAs/InAlAs Multiple-Quantum-Well Optical Modulators
- Band-Gap Change in Ordered/Disordered GaAs_Sb_y Layers Grown on (001) and (111)B InP Substrates : Semiconductors
- Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes
- Effects of PN-Junction on Negative Differential Resistance of InGaAs/InAlAs Multiple Quantum Well Resonant Tunneling Diodes
- Electroluminescence of In_Ga_As/GaAs_Sb_ Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy : Short Note
- Molecular Beam Epitaxial Growth and Characterization of GaAs_Sb_y Layers on (111)B InP Substrates
- InAlAs/AlAsSb Type II Multiple Quantum Well Layers Lattice-Matched to InP Grown by Molecular Beam Epitaxy
- Electric Properties of Pb(Sb_Nb_)O_3-PbTiO_3-PbZrO_3 Ceramics Modified with Certain Additives
- Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates
- 2.43 μm Light Emission of InGaAsSbN Quantum Well Diodes Grown on InP Substrates
- Effect of Sb Incorporation on Electroluminescence of InGaAsSbN Quantum Well Diodes Grown on GaAs Substrates
- Nitrogen Plasma Doping during Metalorganic Chemical Vapor Deposition of ZnSe
- Annealing Effects on Electroluminescence and Laser Operation of InGaAsSbN Quantum Well Diodes grown on InP Substrates
- Photoreflectance Characterization of Ordered/Disordered GaAs0.5Sb0.5 layers Grown on InP Substrates by Molecular Beam Epitaxy
- Annealing Behavior of Interstitial Nitrogen Pair in Czochralski Silicon Observed by Infrared Absorption Method