Annealing Behavior of Interstitial Nitrogen Pair in Czochralski Silicon Observed by Infrared Absorption Method
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概要
- 論文の詳細を見る
Annealing behaviors of interstitial nitrogen pairs (N-N pairs) in Czochralski (CZ) silicon are investigated by infrared absorption measurement. The annealing processes at 1000°C and 1100°C decrease the intensity of the infrared absorption peak at 963 cm-1, which is caused by the N-N pairs. The 963 cm-1 peak disappears during the annealing processes at 1000°C and 1100°C for 90 min and 30 min, respectively. It is proposed that the N-N pairs aggregate on grown-in void defects and/or grown-in oxide precipitates during annealing.
- Japan Society of Applied Physicsの論文
- 2004-04-01
著者
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Inoue Naohisa
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Yamada-kaneta Hiroshi
Nano-electronic Materials Research And Engineering Laboratory Fujitsu Laboratories Limited
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Tanahashi Katsuto
Nano-electronic Materials Research And Engineering Laboratory Fujitsu Laboratories Limited
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Yamada-Kaneta Hiroshi
Nano-electronic Materials Research and Engineering Laboratory, Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Tanahashi Katsuto
Nano-electronic Materials Research and Engineering Laboratory, Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
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Inoue Naohisa
Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2 Gakuencho, Sakai 599-8570, Japan
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