Annealing Effects on Electroluminescence and Laser Operation of InGaAsSbN Quantum Well Diodes grown on InP Substrates
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概要
- 論文の詳細を見る
The effects of rapid thermal annealing (RTA) on the electroluminescence (EL) properties of InGaAsSbN quantum well diodes grown on InP substrates were studied. A marked enhancement of EL intensity and a blue shift of peak energy were observed with RTA at 700°C for 20 s. Furthermore, laser operation at 2.07 μm was achieved for the InGaAsSbN quantum well diode upon RTA, where the threshold current density was 1.48 kA/cm2 at 90 K.
- Japan Society of Applied Physicsの論文
- 2004-10-01
著者
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Kawamura Yuichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Inoue Naohisa
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Nakagawa Tomokatsu
Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2 Gakuen-cho,
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Inoue Naohisa
Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570, Japan
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Kawamura Yuichi
Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570, Japan
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Nakagawa Tomokatsu
Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2 Gakuen-cho, Sakai, Osaka 599-8570, Japan
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