Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates
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概要
- 論文の詳細を見る
An InGaAsP/InAlAs/InP asymmetric quantum well structure was proposed and fabricated, where a large change in the wave function overlap of electrons and holes can be expected with the application of a low voltage. It was demonstrated by using photocurrent measurements that a large absorption change can be realized by applying a bias within $\pm 1$ V. The observed absorption change was caused by a large change in the wave function overlap of electrons and holes with the application of an opposite electric field.
- 2011-02-25
著者
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Kawamura Yuichi
Research Institute For Advanced Science And Technology Osaka Prefecture University
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Kawamura Yuichi
Research Institute for Advanced Science and Technology, Osaka Prefecture University, Sakai 599-8570, Japan
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