Comparative Study of ZnSe Growth Rate by Metal Organic Molecular Beam Epitaxy Using Different Zn Sources : Semiconductors and Semiconductor Devices

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概要

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• The substrate temperature dependence of ZnSe growth rate is investigated using dimethyl zinc and diethyl zinc as Zn sources in metalorganic molecular beam epitaxy under the same flux intensity conditions. The growth rate for dimethyl zinc is higher at substrate temperatures above 450℃, and more sensitive to change in substrate temperature than the growth rate for diethyl zinc. The mechanism resulting in the growth rate difference observed in this study is discussed in relation to the desorption process preceding ZnSe congruent evaporation.

• 社団法人応用物理学会の論文
• 1988-09-20

著者

• Shinoda Yukinobu

  Ntt Electrical Communication Laboratories

• KOBAYASHI Naoki

  NTT Electrical Communication Laboratories

• KOBAYASHI Yoshihiro

  NTT Electrical Communication laboratories

関連論文

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• Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy
• Comparative Study of ZnSe Growth Rate by Metal Organic Molecular Beam Epitaxy Using Different Zn Sources : Semiconductors and Semiconductor Devices
• Thermal Desorption from Si(111) Surfaces with Native Oxides Formed During Chemical Treatments
• Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy
• Growth of ZnSe/GaAs Superlattices by Migration-Enhanced Epitaxy
• Lattice Vibration of Thin-Layered AlAs-GaAs Superlattices
• ZnSe / GaAs Heterointerface Stabilization by High-Temperature Se Treatment of GaAs Surface : Condensed Matter

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