New Developments of Less Toxic Group-V Precursurs for the Metalorganic Vapour Phase Epitaxy of III-V-Semiconductors: In-Situ-Formation of As-H Functions by Thermal β-Elimination of Specific As-Trialkyl Compounds
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概要
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Thermal decomposition studies and low pressure metalorganic vapour phase epitaxy (MOVPE) growth experiments have been performed using novel, less toxic arsinetrialkyl sources, which decompose by the β-hydride elimination process. Therefore, As-H functions are automatically formed in the hot temperature zone of the MOVPE reactor to enable high quality layer deposition. Decomposition studies have been carried out under growth conditions in the MOVPE reactor by quadrupole mass spectroscopy (QMS). The β-elimination decomposition of the novel As-sources diethyltertiarybutyl-arsine (DEtBAs) and dietylisopropyl-arsine (DEiPrAs) is proven by the detection of the cracking products diethylarsine (DEAsH) and the corresponding alkene fragments isobutene (C_4H_8) and propene (C_3H_6), respectivery. The alkene-to-radical formation for different As- and P-precursors indicate a β-elimination efficiency of about 60% for tertiarybutyl- and 40% for isopropyl-groups, whereas for etyl groups no significant indication of a β-elimination has been observed. GaAs bulk layers were grown by using trimethylgallium (TMGa) in combination with the β-eliminating As-trialkyl sources DEtBAs and DEiPrAs, respectively, as well as by using TEAs or DEAsH, both decomposing under ethyl-radical formation. In addition, the partially fluorinated source pentafluorethyl-diisopropyl-arsine (PFEDiPrAs) has been investigated, however, only an etching of the GaAs substrate surface could be detected independently of the growth conditions. The use of β-eliminating As-trialkyl compounds leads to significantly improved layer properties as compared to TEAs-grown structures. GaAs layers, grown with DEtBAs or DEiPrAs at substrate temperatures of 600-650℃ and V/III ratios between 8 and 80 exhibit p-type behaviour with net carrier concentrations of 3-5×10^<15> cm^<-3> and hole mobilities of 350-400 cm^2/V・s at 300 K and 3500-4000 cm^2/V・s at 77 K. Carbon is the dominant acceptor impurity in GaAs layers at present, as determined by PL spectroscopy. These results indicate a promising potential of the class of β-eliminating As-compounds as replacements for arsine in the MOVPE.
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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Marschner Thomas
Wissenschaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Phsik Philipps-universi
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Stolz Wolfgang
Ntt Basic Research Laboratories
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Stolz Wolfgang
Wissenschaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Phsik Philipps-universi
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ZIMMERMANN Gunnar
Wissensshaftliches Zentrum fur Materialwissenschaften (WZMW) und Fachbereich Phsik, Philipps-Univers
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SPIKA Zeljko
Wissensshaftliches Zentrum fur Materialwissenschaften (WZMW) und Fachbereich Phsik, Philipps-Univers
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GOBEL Ernst
Wissenschaftliches Zentrum fur Materialwissenschaften (WZMW) und Fachbereich Phsik, Philipps-Univers
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GIMMNICH Peter
Wissenschaftliches Zentrum fur Materialwissenschaften (WZMW) und Fachbereich Chemie, Philipps-Univer
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BECKER Ralf
Wissenschaftliches Zentrum fur Materialwissenschaften (WZMW) und Fachbereich Chemie, Philipps-Univer
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LORBERTH Jorg
Wissenschaftliches Zentrum fur Materialwissenschaften (WZMW) und Fachbereich Chemie, Philipps-Univer
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GREILING Arnd
sgs mochem products GmbH
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SALZMANN Andreas
sgs mochem products GmbH
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Becker Ralf
Wissenschaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Chemie Philipps-univers
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Gobel Ernst
Wissenschaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Phsik Philipps-universi
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Spika Zeljko
Wissensshaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Phsik Philipps-universi
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Lorberth Jorg
Wissenschaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Chemie Philipps-univers
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Gimmnich Peter
Wissenschaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Chemie Philipps-univers
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Zimmermann Gunnar
Wissensshaftliches Zentrum Fur Materialwissenschaften (wzmw) Und Fachbereich Phsik Philipps-universi
関連論文
- New Developments of Less Toxic Group-V Precursurs for the Metalorganic Vapour Phase Epitaxy of III-V-Semiconductors: In-Situ-Formation of As-H Functions by Thermal β-Elimination of Specific As-Trialkyl Compounds
- Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy : Semiconductors and Semiconductor Devices
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