Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates
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概要
- 論文の詳細を見る
- Institute of Physicsの論文
- 2014-04-16
著者
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Hsiao Yu-Lin
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan
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Hsiao Yu-Lin
Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan.
関連論文
- Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
- DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
- Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates