Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-04-16

著者

• Hsiao Yu-Lin

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Hsiao Yu-Lin

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan.

関連論文

• Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
• DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology
• Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

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