Electroless Plating Ni Induced Crystallization of Amorphous Silicon Thin Films : Semiconductors

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概要

• 論文の詳細を見る

• There is a great demand to fabricate polycrystalline silicon films at low temperatures. A metal-induced crystallization method can significantly decrease the crystallization temperature of amorphous silicon (a-Si). Metal thin films are generally deposited on a-Si by the physical vapor deposition method followed by crystallization at a temperature lower than 600℃. In this study, a faster and more inexpensive electroless Ni plating method was introduced. It was found that Si crystallinity increased with Ni plating time, but dropped when the time reached 10 min. When the plating time was less than 5 min, all of the poly-Si became needlelike with preferred orientation parallel to the substrate.

• 社団法人応用物理学会の論文
• 2001-09-15

著者

• FENG Ming-Shiann

  Department of Materials Science & Engineering, National Chiao-Tung University

• Chen Ying-chia

  Department Of Materials Science And Engineering National Chiao Tung University

• HU Guo-Ren

  Department of Materials Science and Engineering, National Chiao Tang University

• WU Yew-Chung

  Department of Materials Science and Engineering, National Chiao Tang University

• Hu G‐r

  National Chiao Tung Univ. Hsinchu Twn

• Hu Guo-ren

  Department Of Materials Science And Engineering National Chiao Tung University

• Wu Yew-chung

  Department Of Materials Science And Engineering National Chiao Tang University

• Chao Chi-wei

  Department Of Materials Science And Engineering National Chiao Tang University

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• Electroless Plating Ni Induced Crystallization of Amorphous Silicon Thin Films : Semiconductors
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• Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si

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