Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si
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概要
- 論文の詳細を見る
Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films are usually deposited by the physical vapor deposition (PVD) method, which is time-consuming and expensive in terms of equipment cost. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni-induced lateral crystallization TFT were as good as those of PVD Ni-induced lateral crystallization TFT.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-15
著者
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Feng Ming-shian
Department Of Materials Science And Engineering National Chiao Tung University
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Chao Chi-wei
Department Of Materials Science And Engineering National Chiao Tang University
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Hu Gau-ren
Department Of Materials Science And Engineering National Chiao Tung University
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Wu Yew
Department of Material Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
関連論文
- Electroless Plating with Pd Induced Crystallization of Amorphous Silicon Thin Films
- Electroless Plating Ni Induced Crystallization of Amorphous Silicon Thin Films : Semiconductors
- Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si
- Wafer Bonding by Ni-Induced Crystallization of Amorphous Silicon
- Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C
- Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films
- Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si