Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C
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概要
- 論文の詳細を見る
Two annealing methods, pulse rapid thermal annealing (RTA) and conventional furnace annealing (CFA), were used to fabricate nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) at 565 °C. It was found that the growth rate of RTA-POLY was 5 times higher than that of CFA-POLY. The performance of RTA-thin-film transistors (TFTs) was not as good as that of CFA-TFT. RTA-TFT showed lower drain current, higher threshold voltage, larger subthreshold swing, lower electron mobility, and lower leakage current than CFA-TFT.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-11-15
著者
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Wu Yew
Department of Material Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Hu Chen-Ming
Department of Material Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Gong Jun-Wei
Department of Material Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
関連論文
- Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si
- Wafer Bonding by Ni-Induced Crystallization of Amorphous Silicon
- Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes
- Comparison of Ni-Metal Induced Lateral Crystallization Thin-Film Transistors Fabricated by Rapid Thermal Annealing and Conventional Furnace Annealing at 565 °C
- Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si