Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes
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概要
- 論文の詳細を見る
Ni-metal-induced lateral crystallization (NILC) of amorphous Si ($\alpha$-Si) has been used to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and NiSi2 precipitates, which degrade the device performance. In this study, $\alpha$-Si film was coated on the top of contact holes as Ni-gettering layer. It was found the Ni-metal impurity within the NILC poly-Si film was reduced without addition mask.
- Japan Society of Applied Physicsの論文
- 2007-12-25
著者
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Wu Yewchung
Department Of Material Science And Engineering National Chiao Tung University
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Hu Chen-Ming
Department of Material Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
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Wu YewChung
Department of Material Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, R.O.C.
関連論文
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- Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes
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