Enhanced Light Output in Double Roughened GaN Light-Emitting Diodes via Various Texturing Treatments of Undoped-GaN Layer
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概要
- 論文の詳細を見る
An InGaN–GaN light-emitting diodes (LEDs) with double roughened (p-GaN and undoped-GaN) surfaces were successfully fabricated by surface-roughening, wafer-bonding and laser lift-off technologies. The effect of the roughness of the undoped-GaN layer on the performance of double roughened LEDs was investigated. It was found that the rms roughness of the undoped-GaN layer increased from 18.6 to 146.7 nm, the output power increased from 7.2 to 10.2 mW, and view angle decreased from 133.6 to 116°.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-10-15
著者
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Wu Yewchung
Department Of Material Science And Engineering National Chiao Tung University
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Peng Wei
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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Wu YewChung
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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Peng Wei
Department of communication Engineering
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