Performances of Ni-Induced Lateral Crystallization Thin Film Transistors with $\langle 111 \rangle$ and $\langle 112 \rangle$ Needle Grains

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概要

• 論文の詳細を見る

• Thin-film transistors (TFTs) fabricated using $\langle 111 \rangle$ and $\langle 112 \rangle$ needle grains have been investigated. They were fabricated by Ni–metal-induced lateral crystallization and Ni–metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility ($\mu_{\text{FE}}$), 4-fold-higher on/off current ratio ($I_{\text{on}}/I_{\text{off}}$), and 2.4-fold-lower leakage current ($I_{\text{off}}$) compared with those of the 111-TFT.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-07-15

著者

• Hou Chih‐yuan

  Department Of Materials Science And Engineering National Chiao Tung University

• Hou Chih-yuan

  Department Of Material Science And Engineering National Chiao Tung University

• Wu YewChung

  Department of Material Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road,

• Wu Yewchung

  Department Of Material Science And Engineering National Chiao Tung University

関連論文

• Gettering of Ni from Ni–Metal Induced Lateral Crystallization Polycrystalline Silicon Films Using a Gettering Substrate
• Performances of Ni-Induced Lateral Crystallization Thin Film Transistors with $\langle 111 \rangle$ and $\langle 112 \rangle$ Needle Grains
• Improved Annealing Process for Electroless Pd Plating Induced Crystallization of Amorphous Silicon
• Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
• Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes
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• Thermal Annealing Effect of Indium Tin Oxide Contact to GaN Light-Emitting Diodes
• Thermal Annealing Effect Between Ni Film and Mg-Doped GaN Layer
• Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films
• Effects of Tensile Stress on Growth of Ni–Metal-Induced Lateral Crystallization of Amorphous Silicon

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