Gettering of Ni from Ni–Metal Induced Lateral Crystallization Polycrystalline Silicon Films Using a Gettering Substrate

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概要

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• Ni–metal-induced lateral crystallization (NILC) of amorphous silicon ($\alpha$-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using $\alpha$-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-15

著者

• Lin Chi-ching

  Department Of Material Science And Engineering National Chiao Tung University

• Hou Chih-yuan

  Department Of Material Science And Engineering National Chiao Tung University

• Wu YewChung

  Department of Material Science and Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road,

• Wu Yewchung

  Department Of Material Science And Engineering National Chiao Tung University

関連論文

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