Effects of Tensile Stress on Growth of Ni–Metal-Induced Lateral Crystallization of Amorphous Silicon

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概要

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• The Ni–metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi2 precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi2 precipitates, and (3) the subsequent migration of NiSi2 precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress on the growth of NILC. It was found that tensile stress did not enhance NiSi2 formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-10-15

著者

• Hou Chih-yuan

  Department Of Material Science And Engineering National Chiao Tung University

• Wu Yewchung

  Department Of Material Science And Engineering National Chiao Tung University

• Wu YewChung

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Hou Chih-Yuan

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

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• Improved Annealing Process for Electroless Pd Plating Induced Crystallization of Amorphous Silicon
• Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
• Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes
• Enhanced Light Output in Double Roughened GaN Light-Emitting Diodes via Various Texturing Treatments of Undoped-GaN Layer
• Thermal Annealing Effect of Indium Tin Oxide Contact to GaN Light-Emitting Diodes
• Thermal Annealing Effect Between Ni Film and Mg-Doped GaN Layer
• Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films
• Effects of Tensile Stress on Growth of Ni–Metal-Induced Lateral Crystallization of Amorphous Silicon

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