Thermal Annealing Effect of Indium Tin Oxide Contact to GaN Light-Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
We have fabricated GaN-based light-emitting diodes (LEDs) using transparent indium tin oxide (ITO) for $ p$-type contacts. The current–voltage ($I$–$V$) characteristics of the devices have been studied. When annealed at 700°C, the $ p$–$n$ junction of the diodes became very leaky, and even electrical short circuits have been observed. According to scanning electron microscopy (SEM) and energy-dispersive X-ray spectrometer analyses (EDS), it was found that indium (In) diffused into the LED structure with defects such as threading dislocations (TDs) or V-pits. The defects provide leakage paths to cause short circuits in $ p$–$n$ junctions at high annealing temperatures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-10-15
著者
-
LAN Wen-How
Department of Electrical Engineering, National University of Kaohsiung
-
Wu Yewchung
Department Of Material Science And Engineering National Chiao Tung University
-
Hsu Chin-Yuan
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
-
Lan Wen-How
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, R.O.C.
関連論文
- Prenatal Diagnosis and Antenatal History of Persistent Truncus Arteriosus : A Case Report
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- Inductively Coupled Plasma Reactive Ion Etching-Induced GaN Defect Studied by Schottky Current Transport Analysis
- Gettering of Ni from Ni–Metal Induced Lateral Crystallization Polycrystalline Silicon Films Using a Gettering Substrate
- Performances of Ni-Induced Lateral Crystallization Thin Film Transistors with $\langle 111 \rangle$ and $\langle 112 \rangle$ Needle Grains
- Improved Annealing Process for Electroless Pd Plating Induced Crystallization of Amorphous Silicon
- Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
- Inductively Coupled Plasma Reactive Ion Etching-Induced GaN Defect Studied by Schottky Current Transport Analysis
- Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- Enhanced Light Output in Double Roughened GaN Light-Emitting Diodes via Various Texturing Treatments of Undoped-GaN Layer
- Thermal Annealing Effect of Indium Tin Oxide Contact to GaN Light-Emitting Diodes
- Thermal Annealing Effect Between Ni Film and Mg-Doped GaN Layer
- Enhancement of Light Output Power of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes by Titanium Dioxide Texturing
- Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films
- Effects of Tensile Stress on Growth of Ni–Metal-Induced Lateral Crystallization of Amorphous Silicon