Enhancement of Light Output Power of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes by Titanium Dioxide Texturing
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概要
- 論文の詳細を見る
The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO2) textured film has been observed. The output power values of conventional and TiO2 textured LEDs at an injection current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO2 textured LEDs at an injection current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO2 textured LEDs at an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-output-power InGaN/GaN MQW LED has been obtained by coating with a TiO2 textured film.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-07-25
著者
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LAN Wen-How
Department of Electrical Engineering, National University of Kaohsiung
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HUANG Kuo-Chin
Department of Electrophysics, National Chiao Tung University
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HUANG Kai
Depart.of Metallurgy,Central South Univ.of Tch
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- Enhancement of Light Output Power of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes by Titanium Dioxide Texturing