Inductively Coupled Plasma Reactive Ion Etching-Induced GaN Defect Studied by Schottky Current Transport Analysis

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-01-15

著者

• HUANG Kai

  Department of Applied Chemistry, Saga University

• LAN Wen-How

  Department of Electrical Engineering, National University of Kaohsiung

• HUANG Kuo-Chin

  Department of Electrophysics, National Chiao Tung University

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