Inductively Coupled Plasma Reactive Ion Etching-Induced GaN Defect Studied by Schottky Current Transport Analysis
スポンサーリンク
概要
- 論文の詳細を見る
The defect induced by inductively coupled plasma reactive ion etching (ICP-RIE) on a GaN surface has been examined through current transport analysis. The current transport mechanism of field emission and thermionic emission were characterized. Annealing in nitrogen and hydrogen ambient was used to eliminate the defect induced by the ICP-RIE process. A comparison of the ideal factor and characteristic energy reveals that hydrogen is more effective than nitrogen in removing the defect induced by the ICP-RIE.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-01-15
著者
-
LAN Wen-How
Department of Electrical Engineering, National University of Kaohsiung
-
HUANG Kuo-Chin
Department of Electrophysics, National Chiao Tung University
-
Huang Kai
Department Of Applied Chemistry Saga University
-
Huang Kuo-Chin
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
-
HUANG Kai
Depart.of Metallurgy,Central South Univ.of Tch
-
Lan Wen-How
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, Republic of China
-
Huang Kai
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
関連論文
- Leaching Kinetics of Cadmium from Scallop Waste by Dilute Sulfuric Acid Solution
- Alanyl Aminopeptidase from Human Seminal Plasma: Purification, Characterization, and Immunohistochemical Localization in the Male Genital Tract
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- Inductively Coupled Plasma Reactive Ion Etching-Induced GaN Defect Studied by Schottky Current Transport Analysis
- Template Effect of Some Ions on the Structures and Morphologies of Ni(OH)2 and Sb2O 3
- PREPARATION OF UTRAFINE MONODISPERSED NiO PRECURSOR POWDER BY DOUBLE-JET PRECIPITATION
- Inductively Coupled Plasma Reactive Ion Etching-Induced GaN Defect Studied by Schottky Current Transport Analysis
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- Thermal Annealing Effect of Indium Tin Oxide Contact to GaN Light-Emitting Diodes
- Thermal Annealing Effect Between Ni Film and Mg-Doped GaN Layer
- Enhancement of Light Output Power of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes by Titanium Dioxide Texturing