Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films

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概要

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• The growth mechanism of a hybrid process to crystallize amorphous silicon (a-Si) film was studied. In the process, a-Si was first converted to polycrystalline silicon (poly-Si) using Ni–metal-induced lateral crystallization (NILC), and then annealed with an excimer laser (ELA). Two regions based on different crystallization mechanisms were found on these NILC-ELA films: (A) a-Si melting region, and (B) a-Si/poly-Si melting region. In the a-Si melting region, the sizes and shapes of the needle Si grains were similar to those of NILC poly-Si. In the a-Si/poly-Si melting region, the shapes and sizes of poly-Si grains were quite different from those of NILC needlelike grains. Two crystallization regimes were found in the a-Si/poly-Si melting region: (1) geometrical coalescence regime and (2) complete melting regime. In the geometrical coalescence regime, the width of grains dramatically increased to 600 nm due to the geometrical coalescence of Si needle grains. However, in the complete melting regime, the NILC Si films melted completely. Small poly-Si grains were formed by homogeneous nucleation and growth.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-01-15

著者

• Hu Guo-ren

  Department Of Materials Science And Engineering National Chiao Tung University

• Chao Chi-wei

  Department Of Materials Science And Engineering National Chiao Tang University

• Wu Yewchung

  Department Of Material Science And Engineering National Chiao Tung University

• Shih Hsieh-Chih

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chao Chi-Wei

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

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• Electroless Plating Ni Induced Crystallization of Amorphous Silicon Thin Films : Semiconductors
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• Effect of Nickel Concentration on Bias Reliability and Thermal Stability of Thin-Film Transistors Fabricated by Ni-Metal-Induced Crystallization
• Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes
• Enhanced Light Output in Double Roughened GaN Light-Emitting Diodes via Various Texturing Treatments of Undoped-GaN Layer
• Thermal Annealing Effect of Indium Tin Oxide Contact to GaN Light-Emitting Diodes
• Thermal Annealing Effect Between Ni Film and Mg-Doped GaN Layer
• Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films
• Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si
• Effects of Tensile Stress on Growth of Ni–Metal-Induced Lateral Crystallization of Amorphous Silicon

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