Electroless Plating with Pd Induced Crystallization of Amorphous Silicon Thin Films

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概要

• 論文の詳細を見る

• A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550℃, two kinds of needlelike grains were found. The direction of the primary grain was along {211} and the growth of the secondary grain occurred along the {011} direction.

• 社団法人応用物理学会の論文
• 2002-11-15

著者

• Huang Tian-jiun

  Department Of Materials Science And Engineering National Chiao Tang University

• HU Guo-Ren

  Department of Materials Science and Engineering, National Chiao Tang University

• WU Yew-Chung

  Department of Materials Science and Engineering, National Chiao Tang University

• CHAO Chi-Wei

  Department of Materials Science and Engineering, National Chiao Tang University

• Hu G‐r

  National Chiao Tung Univ. Hsinchu Twn

• Hu Guo-ren

  Department Of Materials Science And Engineering National Chiao Tung University

• Wu Yew-chung

  Department Of Materials Science And Engineering National Chiao Tang University

• Chao Chi-wei

  Department Of Materials Science And Engineering National Chiao Tang University

関連論文

• Electroless Plating with Pd Induced Crystallization of Amorphous Silicon Thin Films
• Electroless Plating Ni Induced Crystallization of Amorphous Silicon Thin Films : Semiconductors
• Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si
• Improved Annealing Process for Electroless Pd Plating Induced Crystallization of Amorphous Silicon
• Growth Mechanism of Laser Annealing of Nickel-Induced Lateral Crystallized Silicon Films
• Device Characteristics of Polysilicon Thin-Film Transistors Fabricated by Electroless Plating Ni-Induced Crystallization of Amorphous Si

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