Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• Chang Yu-chia

  Graduate Institute Of Electro-optical Engineering Graduate Institute Of Electronics Engineering And

• Lin C‐f

  National Chiao Tung Univ. Hsinchu Twn

• Su Yi-shin

  Graduate Institute Of Electro-optical Engineering National Taiwan University

• Wu Cheng-heng

  Institute Of Electro-optical Engineering National Chiao Tung University

• LIN Ching-Fuh

  Graduate Institute of Electro-Optical Engineering, Graduate Institute of Electronics Engineering and

• WU Chao-Hsin

  Graduate Institute of Electro-Optical Engineering, Graduate Institute of Electronics Engineering and

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• Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells
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• Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells

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