Broad-Gain Measurement of Semiconductor Optical Amplifier with Nonidentical Multiple Quantum Wells

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概要

• 論文の詳細を見る

• Our measurement shows that the spectral range of semiconductor optical amplifiers with nonidentical multiple quantum wells could be near 300 nm for a gain coefficient more than 10 cm-1, from 1300 to 1600 nm. The maximum gain could be 50 cm-1. The extremely broadband gain spectrum can be quickly measured using a monolithic two-segment device that is specifically designed for gain measurement without the need for a complicated external setup.

• Japan Society of Applied Physicsの論文
• 2006-03-25

著者

• Su Yi-shin

  Graduate Institute Of Electro-optical Engineering National Taiwan University

• WU Chao-Hsin

  Graduate Institute of Electro-Optical Engineering, Graduate Institute of Electronics Engineering and

• Lin Ching-fuh

  Graduate Institute Of Electro-optical Engineering Graduate Institute Of Electronics Engineering And

• Chang Wei-che

  Graduate Institute Of Electronics Engineering National Taiwan University

• Lin Ching-Fuh

  Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

• Chang Wei-Che

  Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

• Su Yi-Shin

  Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

• Wu Chao-Hsin

  Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

関連論文

• Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells
• Broad-Gain Measurement of Semiconductor Optical Amplifier with Nonidentical Multiple Quantum Wells
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• Broad-Gain Measurement of Semiconductor Optical Amplifier with Nonidentical Multiple Quantum Wells
• Significance of Surface Properties of CdS Nanoparticles
• Electron-Determined Nonuniform Carrier Distribution among InGaAsP Multiple Quantum Wells
• Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells

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