Electron-Determined Nonuniform Carrier Distribution among InGaAsP Multiple Quantum Wells

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概要

• 論文の詳細を見る

• Experiments on laser diodes and superluminescent diodes with nonidentical InGaAsP multiple quantum wells (MQWs) show that quantum wells near the n-cladding layer could accumulate more carriers than those near the p-cladding layer, indicating that nonuniform carrier distribution is determined by electrons instead of holes. The electron-determined behavior is attributed to the thick separate-confinement heterostructure layer. This contrary observation to hole-determined nonuniform carrier distribution implies that carrier distribution among the MQWs could be engineered for desired purposes.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-09-15

著者

• Wu Bing-ruey

  Telecommunication Laboratory Chunghua Telecom Co. Ltd.

• Laih Lih-wen

  Telecommunication Laboratory Chunghua Telecom Co. Ltd.

• Lin Ching-fuh

  Graduate Institute Of Electro-optical Engineering Graduate Institute Of Electronics Engineering And

• Lin Ching-Fuh

  Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

• Wu Bing-Ruey

  Telecommunication Laboratory, Chunghua Telecom Co., Ltd., Yang-Mei, Taoyuan, Taiwan, R.O.C.

関連論文

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• Broad-Gain Measurement of Semiconductor Optical Amplifier with Nonidentical Multiple Quantum Wells
• Significance of Surface Properties of CdS Nanoparticles
• Electron-Determined Nonuniform Carrier Distribution among InGaAsP Multiple Quantum Wells
• Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells

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