Influence of Separate Confinement Heterostructure Layer on Carrier Distribution in InGaAsP Laser Diodes with Nonidentical Multiple Quantum Wells

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概要

• 論文の詳細を見る

• The thickness of the separate confinement heterostructure (SCH) layer is found to have a significant influence on the carrier distribution among InGaAsP multiple quantum wells in laser diodes. When the SCH layer is 120 nm thick, the carrier distribution of the fabricated laser diodes favors quantum wells near the n-cladding layer. When the thickness of the SCH layer is reduced to 20 nm, the carrier distribution of the fabricated laser diodes favors quantum wells near the p-cladding layer. Our experiments indicate that the carrier distribution of a fabricated laser diode can be engineered using an SCH layer of appropriate thickness.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• Chang Yu-chia

  Graduate Institute Of Electro-optical Engineering Graduate Institute Of Electronics Engineering And

• Su Yi-shin

  Graduate Institute Of Electro-optical Engineering National Taiwan University

• WU Chao-Hsin

  Graduate Institute of Electro-Optical Engineering, Graduate Institute of Electronics Engineering and

• Lin Ching-fuh

  Graduate Institute Of Electro-optical Engineering Graduate Institute Of Electronics Engineering And

• Wu Chao-Hsin

  Graduate Institute of Electro-Optical Engineering, Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, R.O.C.

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