Variations of Channel Conductance in AlGaN/GaN Structure with Sub-Bandgap Laser Light and Above-Bandgap Illuminations
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概要
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Variations of the voltage response between source and drain electrodes of an AlGaN/GaN high electron mobility transistor by the green laser light or ultraviolet (UV) illumination are studied. A subsequent green laser illumination causes the voltage between the electrodes to increase with background UV illumination. Interactions between surface states and excess carriers generated by the UV light are proposed to be responsible for the voltage increase. Excess electrons are captured by the positively charged surface states after injection into the surface region with the assistance of the green laser light and result in a reduced two-dimensional electron gas density.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
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Sheu Jinn-Kong
Institute of Electro-Optical Science and Engineering and Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
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Li Yun-Li
Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China
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Chang Yun-Chorng
Institute of Electro-Optical Science and Engineering and Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
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Lin Tzung-Han
Institute of Electro-Optical Science and Engineering and Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
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