Characteristics and Interactions of Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates With or Without Short-Period Superlattice Insertion
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概要
- 論文の詳細を見る
- 2006-09-15
著者
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Wang Wei-lin
Department Of Materials Science And Engineering Feng Chia University
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Wang Cheng-liang
Department Of Materials Science And Engineering Feng Chia University
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GONG Jyh-Rong
Department of Physics, National Chung Hsing University
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LIAO Wei-Tsai
Department of Materials Science and Engineering, Feng Chia University
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HE Ju-Liang
Department of Materials Science and Engineering, Feng Chia University
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CHI Yuan-Chen
Precision Instrument Support Center, Feng Chia University
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SHI Jen-Bin
Precision Instrument Support Center, Feng Chia University
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Gong Jyh-rong
Department Of Physics National Chung Hsing University
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He Ju-liang
Department Of Materials Science And Engineering Feng Chia University
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Liao Wei-tsai
Department Of Materials Science And Engineering Feng Chia University
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Shi Jen-bin
Precision Instrument Support Center Feng Chia University
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Chi Yuan-chen
Precision Instrument Support Center Feng Chia University
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Liao Wei-Tsai
Department of Electro-Physics, National Chiao-Tung University, Hsinchu, Taiwan 30010, R.O.C.
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Gong Jyh-Rong
Department of Materials Science and Engineering, Feng Chia University
関連論文
- Characteristics and Interactions of Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates With or Without Short-Period Superlattice Insertion
- Characteristics and Interactions of Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates With or Without Short-Period Superlattice Insertion
- Effects of AI-containing Intermediate III-nitride Strained Multilayers on the Threading Dislocation Density and Optical Properties of GaN Films
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