Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures
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概要
- 論文の詳細を見る
In this article, a comparison on the temperature dependence of the electron transport properties of the undoped and modulation-doped AlGaN/GaN heterostructures is presented. The results obtained indicate that the device structure plays an important role in the temperature-dependent transport behavior of the devices. The undoped structure has a nearly constant 2DEG concentration over a wide temperature range. The modulation-doped structure has a temperature-dependent electron concentration. The increase in electron concentration in the modulation-doped structure at high temperatures is due to the thermal activation of Si donors in the AlGaN layer. In addition, the modulation-doped structure shows comparable electron mobility with the undoped structure at high temperatures, indicating that the modulation-doped structure would exhibit a better device performance at high temperatures.
- Japan Society of Applied Physicsの論文
- 2004-06-01
著者
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Lee Chien-ping
Department Of Electronic Engineering National Chiao Tung University
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Lee Chien-chi
Department Of Electronics Engineering National Chiao Tung University
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Chi Jim
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
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Tu Ru-chin
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
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Chuo Chang-cheng
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
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Tu Ru-Chin
Opto-Electronics & Systems Laboratories, Hsinchu, Taiwan, R.O.C.
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Chuo Chang-Cheng
Opto-Electronics & Systems Laboratories, Hsinchu, Taiwan, R.O.C.
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Lee Chien-Chi
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Shin Cheng-Feng
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Chi Jim
Opto-Electronics & Systems Laboratories, Hsinchu, Taiwan, R.O.C.
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Shih Cheng-Feng
Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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