Photoluminescence Study of High-Quality InGaAs/GaAs Quantum Dots on (111) B GaAs Substrates

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概要

• 論文の詳細を見る

• We present a simple in situ method to fabricate high-quality InGaAs/GaAs quantum dots on (111) B GaAs substrates. The mechanism of the quantum dot formation is not strain relaxation but the growth characteristic of (111) B GaAs under low substrate temperatures. When the growth is performed at low temperatures, the layer-by-layer growth mode is replaced by island growth and therefore quantum dots are formed. The formation of the quantum dots was verified by atomic force microscope (AFM) images and the shift of photoluminescence (PL). The PL emission from the quantum dots was very strong and the full-width at half-maximum (FWHM) of the emission peak was as small as 7.7 meV, indicating excellent quality and very uniform dot formation. The effect of nominal thickness on the quantum dot formation has been investigated.

• 社団法人応用物理学会の論文
• 1999-01-30

著者

• Lee Chien-ping

  Department Of Electronic Engineering National Chiao Tung University

• Tsai F‐y

  National Cheng Kung Univ. Hsinchu Twn

• Tsai Fu-yi

  Department Of Electronics Engineering National Chiao Tung University

関連論文

• Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
• Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
• Performance of AlGaN/GaN Heterostrucrure FETs Over Temperatures
• Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures
• Effects of Low Temprature Grown GaAs Layer on Compositional Disordering of AlGaAs/GaAs Superlattices
• Composition Modulation of In_xGa_As Quantum Wells by Fast Dimer Arsenic Flux Change Using Valved Arsenic Cracker
• Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
• Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
• Photoluminescence Study of High-Quality InGaAs/GaAs Quantum Dots on (111) B GaAs Substrates
• Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors : Semiconductors
• Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate
• Lateral Two-Dimensional p--i--n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
• Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
• Mode Control of Vertical-Cavity Surface-Emitting Lasers by Germanium Coating
• Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures

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