Growth Temperature Reduction for Isoelectronic As-Doped GaN

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概要

• 論文の詳細を見る

• As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-03-01

著者

• Huang Huai-ying

  Department Of Electrophysics National Chiao Tung University

• CHEN Wen-Hsiung

  Department of Electrophysics, National Chiao Tung University

• Chen Wei-kuo

  Department Of Electrophysics Chiao-tung University

• Lee Ming-chih

  Department Of Electrophysics National Chiao Tung University

• Lee Chiung-fen

  Department Of Electrophysics National Chiao-tung University

• Chen Wei-chung

  Department Of Electrophysics National Chiao-tung University

• Lee Wen-hsiung

  Department Of Electrophysics National Chiao-tung University

• Chen Wei-Chung

  Department of Electrophysics, National Chiao-Tung University, Hsin-chu, Taiwan 300, R.O.C.

• Lee Wen-Hsiung

  Department of Electrophysics, National Chiao-Tung University, Hsin-chu, Taiwan 300, R.O.C.

• Lee Chiung-Fen

  Department of Electrophysics, National Chiao-Tung University, Hsin-chu, Taiwan 300, R.O.C.

• Chen Wei-Kuo

  Department of Electrophysics, National Chiao-Tung University, Hsin-chu, Taiwan 300, R.O.C.

関連論文

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• Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy : Semiconductors
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• Comparative Study of Schottky Diode Characteristics in Ni, Ta and Ni/Ta Metal Contact Schemes on n-GaN : Semiconductors
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