Electrical Properties of the Free-Standing Diamond Film at High Voltages

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概要

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• Polycrystalline diamond films were deposited on p-type (100) silicon substrates by the microwave plasma chemical vapor deposition system. The free-standing diamond film was then obtained by etching the silicon substrate with a KOH solution. It was found that more non-diamond components, i.e., SiC and amorphous carbon, existed on the bottom surface of the free-standing diamond film. Two different contact geometries, coplanar contact and sandwich contact geometries, were used to characterize the in-plane and transverse high-voltage electrical properties of the free-standing diamond film, respectively. The transverse electrical property of the free-standing diamond film showed the asymmetric current–voltage ($I$–$V$) characteristic and lower breakdown voltage at $-220$ V and 850 V@. However, the in-plane electrical property exhibited the symmetric $I$–$V$ characteristic in the range of $-1100$ V to 1100 V@. The electrical properties were successfully represented by the Frenkel-Poole conduction mechanism at high voltages ($>200$ V). The simulated results indicated that the breakdown field was strongly related to the Coulombic center density of the free-standing diamond film.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2001-05-15

著者

• Huang Bohr-ran

  Institute Of Electronics And Information Engineering National Yunlin University Of Science And Techn

• Chen Wei-kuo

  Department Of Electrophysics Chiao-tung University

• Ke Wen-cheng

  Department Of Electrophysics National Chiao Tung University

• Chen Wei-Kuo

  Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Huang Bohr-Ran

  Institute of Electronics and Information Engineering, National Yunlin University of Science and Technology, 123 University Road, Section 3, Touliu, Yunlin, Taiwan 640, R.O.C.

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