Effects of Growth Temperature on Solid Incorporation of AlAs_<1-x>Sb_x Using Tertiarybutylarsine as Arsenic Source Precursor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-10-01
著者
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OU Jehn
Department of Electrophysics, National Chiao Tung University
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Ou Jehn
Department Of Electrophysics National Chiao-tung University
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Ou Jehn
Department Of Electrophysics Chiao-tung University
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Chen Wei-kuo
Department Of Electrophysics Chiao-tung University
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Hsu C‐h
Industrial Technol. Res. Inst. Hsinchu Twn
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CHEN Web-Kuo
Department of Electrophysics, National Chiao-Tung University
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HSU Ching-Hao
Department of Electrophysics, National Chiao-Tung University
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Chen Web-kuo
Department Of Electrophysics National Chiao-tung University
関連論文
- Formation of Self-organized GaN Dots on Al_Ga_N by Alternating Supply of Source Precursors
- Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy : Semiconductors
- Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
- Long-Term Photocapacitance Decay Behavior in Undoped GaN : Semiconductors
- Comparative Study of Schottky Diode Characteristics in Ni, Ta and Ni/Ta Metal Contact Schemes on n-GaN : Semiconductors
- A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
- Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
- An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
- Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy
- Crystalline Structure Changes in GaN Films Grown at Different Temperatures
- Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
- Effects of Thermal Annealing on Ni/Ta/n-GaN Schottky Diodes : Semiconductors
- Growth Temperature Reduction for Isoelectronic As-Doped GaN
- Organometallic Vapor Phase Epitaxial Growth of AlAs_xSb_ Films Using Tertiarybutylarsine
- Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide Ceramic
- Effects of Growth Temperature on Solid Incorporation of AlAs_Sb_x Using Tertiarybutylarsine as Arsenic Source Precursor
- Low-Temperature Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition
- Influence of As/Al and Sb/Al Gas Flow Ratios on Growth of AlAs_Sb_x Alloys
- Influence of Thermodynamic Factors on Growth of AlAs_Sb_x Alloys
- Current Properties of GaN V-Defect Using Conductive Atomic Force Microscopy
- Photoluminescence Studies of In-Doped GaN:Mg Films
- Optical Properties of Zn1-xCdxSe Epilayers Grown on (100) GaAs b y Molecular Beam Epitaxy
- Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
- Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
- Electrical Properties of the Free-Standing Diamond Film at High Voltages
- Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
- Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
- Growth Temperature Reduction for Isoelectronic As-Doped GaN