Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy

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概要

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• We used Raman scattering and X-ray diffraction (XRD) methods toinvestigate the properties of InN films deposited at temperaturesranging from 325 to 600°C by metalorganic vapor phase epitaxy(MOVPE). Significant line broadening, softening and intensity evolutionwere observed from films at growth temperatures between 375 and450°C. This can be attributed to the formation of mixedhexagonal and cubic structures and related dislocation defects.As the growth temperature was further increased, the hexagonal phasewas found to be dominant in the deposited InN film.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-09-15

著者

• Shu Chen-ke

  Department Of Electrophysics National Chiao Tung University

• Pan Yung-chung

  Department Of Electrophysics National Chiao-tung University

• CHEN Wen-Hsiung

  Department of Electrophysics, National Chiao Tung University

• Chen Wei-kuo

  Department Of Electrophysics Chiao-tung University

• Lee Ming-chih

  Department Of Electrophysics National Chiao Tung University

• LIN Heng-Ching

  Department of Electrophysics, National Chiao Tung University

• Shu Chen-Ke

  Department of Electrophysics, National Chiao Tung University,

• extscOu Jehn

  Department of Electrophysics, National Chiao Tung University,

• Lin Heng-Ching

  Department of Electrophysics, National Chiao Tung University,

関連論文

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• Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy : Semiconductors
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• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Long-Term Photocapacitance Decay Behavior in Undoped GaN : Semiconductors
• Comparative Study of Schottky Diode Characteristics in Ni, Ta and Ni/Ta Metal Contact Schemes on n-GaN : Semiconductors
• A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
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• An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
• Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy
• Crystalline Structure Changes in GaN Films Grown at Different Temperatures
• Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
• Effects of Thermal Annealing on Ni/Ta/n-GaN Schottky Diodes : Semiconductors
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• Organometallic Vapor Phase Epitaxial Growth of AlAs_xSb_ Films Using Tertiarybutylarsine
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• Influence of As/Al and Sb/Al Gas Flow Ratios on Growth of AlAs_Sb_x Alloys
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• Current Properties of GaN V-Defect Using Conductive Atomic Force Microscopy
• Photoluminescence Studies of In-Doped GaN:Mg Films
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• Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
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