Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-09-15

著者

• Chen W‐k

  Department Of Electrophysics National Chiao Tung University

• Shu Chen-ke

  Department Of Electrophysics National Chiao Tung University

• Pan Yung-chung

  Department Of Electrophysics National Chiao-tung University

• Lin H‐c

  National Nano Device Laboratories

• CHEN Wei-Kuo

  Department of Electrophysics, National Chiao Tung University

• LEE Ming-Chih

  Department of Electrophysics, National Chiao Tung University

• CHEN Wen-Hsiung

  Department of Electrophysics, National Chiao Tung University

• OU Jehn

  Department of Electrophysics, National Chiao Tung University

• LIN Heng-Ching

  Department of Electrophysics, National Chiao-Tung University

• Lee M‐c

  Department Of Electrophysics National Chiao Tung University

• Ou J

  Department Of Electrophysics National Chiao Tung University

• Ou Jehn

  Department Of Electrophysics Chiao-tung University

• Chen Wei-kuo

  Department Of Electrophysics Chiao-tung University

• Lee Ming-chih

  Department Of Electrophysics National Chiao Tung University

• Chuang W‐c

  Department Of Electrophysics National Chiao Tung University

• LIN Heng-Ching

  Department of Electrophysics, National Chiao Tung University

関連論文

• A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
• Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor : semiconductors
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
• Characterization of Antenna Effect by Nondestructive Gate Current Measurement
• Formation of Self-organized GaN Dots on Al_Ga_N by Alternating Supply of Source Precursors
• Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy : Semiconductors
• Raman Scattering of Fe_xRuS_2 Mixed Crystals
• Raman Characterizations of Ruthenium Dichalcogenides
• Optical Properties of Zn_Cd_xSe Epilayers Grown on (100) GaAs by Molecular Beam Epitaxy
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
• Long-Term Photocapacitance Decay Behavior in Undoped GaN : Semiconductors
• Comparative Study of Schottky Diode Characteristics in Ni, Ta and Ni/Ta Metal Contact Schemes on n-GaN : Semiconductors
• A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
• Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy
• Crystalline Structure Changes in GaN Films Grown at Different Temperatures
• Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
• Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
• Electrical Properties of the Free-Standing Diamond Film at High Voltages
• Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain
• Conduction Mechanisms for Off-State Leakage Current of Schottky Barrier Thin-Film Transistors (SBTFT)
• Effects of Thermal Annealing on Ni/Ta/n-GaN Schottky Diodes : Semiconductors
• Growth Temperature Reduction for Isoelectronic As-Doped GaN
• Organometallic Vapor Phase Epitaxial Growth of AlAs_xSb_ Films Using Tertiarybutylarsine
• Deep Level Transient Spectroscopy Depth Profile Measurements of Polycrystalline Zinc Oxide Ceramic
• Effects of Growth Temperature on Solid Incorporation of AlAs_Sb_x Using Tertiarybutylarsine as Arsenic Source Precursor
• Low-Temperature Epitaxy of GaAs by Metalorganic Chemical Vapor Deposition
• Influence of As/Al and Sb/Al Gas Flow Ratios on Growth of AlAs_Sb_x Alloys
• Influence of Thermodynamic Factors on Growth of AlAs_Sb_x Alloys
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• Current Properties of GaN V-Defect Using Conductive Atomic Force Microscopy
• Photoluminescence Studies of In-Doped GaN:Mg Films
• Optical Properties of Zn1-xCdxSe Epilayers Grown on (100) GaAs b y Molecular Beam Epitaxy
• Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
• Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
• Electrical Properties of the Free-Standing Diamond Film at High Voltages
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• CW Laser Heating Effects and Mode Splitting of the Raman Spectra of the (Dy and Y)Ba2Cu3O7-δ Superconductors
• Growth Temperature Reduction for Isoelectronic As-Doped GaN

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