加速寿命試験における還元焼成BTZの抵抗劣化に及ぼすDy添加の効果

概要

論文の詳細を見る
Substitution of Dy rare earth ions in Ba(Ti, Zr)O_3 dielectric materials was studied, using X-ray diffraction. Dy^<3+> ions enter both the A- and B-sites of the perovskite structure, depending on whether there is a Ba or Ti-excess. There are two discrete mechanisms of occupancy :1) all Dy ions enter only Ti-sites as acceptors when Dy concentration is below 2 mol% ; 2) Dy^<3+> enters Ba- and Ti-sites when Dy concentration is above 2 mol%. The Dy_<Ba>^<1+> donor is highly effective in improving the life stability by 10 orders of magnitude. Besides, oxygen vacancies being compensated by the existence of Dy_<Ba>^<1+> which acts as a donor, impedance measurements indicated the existence of an insulating barrier layer, which could help to suppress electromigration of oxygen vacancies, thus the life stability at grain boundaries can be improved by Dy^<3+> incorporation into Ba-site-donors.
社団法人日本セラミックス協会の論文
2001-10-01