Reduction of Spontaneous Surface Segregation in (InP)_2/(GaP)_2 Quantum Wells Grown on Tilted Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-01-15
著者
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Huang K‐f
National Chiao Tung Univ. Hsinchu Twn
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Huang Kai-fung
Department Of Electrophysics National Chiao Tung University
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Huang Kai-feng
Electrophysics Department National Chiao-tung University
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LIN Wen-Jen
Materials R&D Center Chung Shan Institute of Science & Technology
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Huang Kai-feng
Electro Physics Department National Chiao-tung University
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CHENG Yi-Cheng
Institute of Electro-Optical Engineering, National Chiao-Tung University
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CHOU Shu-Tsun
Compound Semiconductor Technologies Inc.
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TAI Kuochou
Institute of Electro-Optical Engineering, National Chiao-Tung University
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CHOU Shu-Tsun
Department of Electrical Engineering, Chung Cheng Institute of Technology
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LIN Alpha
Material R&D Center, Chung Shan Institute of Science and Technology
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Lin Alpha
Material R&d Center Chung Shan Institute Of Science And Technology
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Tai K
Institute Of Electro-optical Engineering National Chiao-tung University
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Tai Kuochou
Institute Of Electro-optical Engineering National Chiato-tung University
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Lin Wen-jen
Material R&d Center Chung Shan Institute Of Science And Technology
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Cheng Yi-cheng
Institute Of Electro-optical Engineering National Chiao-tung University
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- Gamma-Ray Induced Deep Electron Traps in GalnP : Semiconductors
- Temperature and Annealing Effects on Photoluminescence Spectra of (InAs)_1/(GaP)_2 Superlattices Grown by Solid-Source Molecular Beam Epitaxy
- Reduction of Spontaneous Surface Segregation in (InP)_2/(GaP)_2 Quantum Wells Grown on Tilted Substrates
- Ordering Reduction in In_Ga_P Grown by Solid Source Molecular Beam Epitaxy
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