Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-08-01

著者

• CHENG Yi-Cheng

  Institute of Electro-Optical Engineering, National Chiao-Tung University

• CHOU Shu-Tsun

  Compound Semiconductor Technologies Inc.

• TAI Kuochou

  Institute of Electro-Optical Engineering, National Chiao-Tung University

• Tai K

  Institute Of Electro-optical Engineering National Chiao-tung University

• Tai Kuochou

  Institute Of Electro-optical Engineering National Chiato-tung University

• Cheng Yi-cheng

  Institute Of Electro-optical Engineering National Chiao-tung University

関連論文

• Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy
• Temperature and Annealing Effects on Photoluminescence Spectra of (InAs)_1/(GaP)_2 Superlattices Grown by Solid-Source Molecular Beam Epitaxy
• Reduction of Spontaneous Surface Segregation in (InP)_2/(GaP)_2 Quantum Wells Grown on Tilted Substrates
• Ordering Reduction in In_Ga_P Grown by Solid Source Molecular Beam Epitaxy
• Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers
• Anomalous Phosphorus Cracker Temperature-Dependent Photoluminescence Spectra of InGaP Grown by Solid Source Molecular Beam Epitaxy
• Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures
• 0.66μm InGaP/InGaAlP Single Quantum Well Microdisk Lasers
• Phosphorus-Species-Induced Band-Gap Anomaly in InGaP Grown by Solid-Source Molecular-Beam Epitaxy

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