Photoreflectance and C-V Measurement Investigations of Dry Etched Gate Recesses for GaInP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (HEMTs) Using BCl_3 /Ar Plasma

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概要

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• Photoreflectance (PR) spectroscopy and capacitance-voltage (C-V) measurements are used to characterize the surface damage caused by BCl_3/Ar plasma in barrier layer of GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistors (PHEMT). When the BCl_3/Ar flow ratio is either lower or higher than 6:4, PR spectra indicate plasma causes damage such as nonradiative recombination centers, scattering centers and strain which lead to decreased signal intensity, broadened linewidth, and the spectral shift, respectively. The plasma-induced surface damage also results in a positive voltage shift of the C-V curve. By using a BCl_3/Ar mixed gas, the positive voltage shift of the C-V curve is less than that of samples with pure BCl_3. Both PR and C-V measurements are in good agreement. These results show that photoreflectance spectroscopy is a powerful, nondestructive tool for investigating surface damage and can be used to improve the performance of PHEMTs.

• 社団法人応用物理学会の論文
• 1997-12-15

著者

• Su Yan-kuin

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• KUO Chi-Wein

  Department of Electrical Engineering National Cheng Kung University

• Kuo C‐w

  National Cheng Kung Univ. Tainan Twn

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