Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region

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概要

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• The effects of lattice-matched InAlGaN used as barriers in the active region were investigated in near ultraviolet light-emitting diodes (LEDs). By changing the thickness of InAlGaN barriers, it is observed that there exists an optimal thickness. Besides the better carrier confinement in the case of using thick barriers, the simulation results showed that hole distribution in the case of using wide barriers should also play a role in the improvement of optical performance. Hence, an excessive increment in the width of barriers will degrade the optical performance contrarily, owing to the accumulated stress and the difficulty in hole transport in the active region from thick barriers. In addition, the calculated energy bandgap of InAlGaN is higher than that of GaN, which is beneficial for increasing the capability of carrier confinement and simultaneously enhancing the radiative recombination. Under 100 mA, the light output power of the LED with 7.3-nm-thick In<inf>0.018</inf>Al<inf>0.09</inf>Ga<inf>0.892</inf>N barriers can be increased by 36% as compared with the LED with GaN barrier.

• 2013-08-25

著者

• Su Yan-kuin

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• Su Yan-Kuin

  Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

• Chen Ying-Chih

  Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

• Lu Yu-Hsuan

  Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

• Fu Yi-Keng

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

• Huang Shyh-Jer

  Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

• Xuan Rong

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

• Pilkuhn Manfred

  Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

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