Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-04-07

著者

• Fu Yi-Keng

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

• Fu Yi-Keng

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 31040, R.O.C.

関連論文

• Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
• Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes
• Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region
• Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
• Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer (Special Issue : Recent Advances in Nitride Semiconductors)
• Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication

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