Xuan Rong | Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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概要
- Xuan Rongの詳細を見る
- 同名の論文著者
- Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwanの論文著者
関連著者
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Fu Yi-Keng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Xuan Rong
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Lu Yu-Hsuan
Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Chen Jenn-Fang
Electrophysics Department, National Chiao Tung University, Hsinchu 30010, Taiwan, R. O.C.
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Huang Shyh-Jer
Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Pilkuhn Manfred
Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Xuan Rong
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, R.O.C.
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Chen Ying-chih
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Huang Shyh-Jer
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Su Yan-Kuin
Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Su Yan-Kuin
Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Su Yan-Kuin
Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Chen Ying-Chih
Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Chen Ying-Chih
Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Xuan Rong
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Lu Yu-Hsuan
Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Pilkuhn Manfred
Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Lu Yu-Hsuan
Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.
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Fu Yi-Keng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Fu Yi-Keng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, R.O.C.
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Huang Shyh-Jer
Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
著作論文
- Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
- Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes
- Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region
- Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
- Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer (Special Issue : Recent Advances in Nitride Semiconductors)