Feasibility of Fabricating a Modified Volcano-Shaped Field Emitter
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概要
- 論文の詳細を見る
We fabricate modified volcano-shaped field emission arrays (MVSFEAs) using one photomask process and self-aligned technology. Because the enhanced electric field at the tips causes a larger value of β, the resulting onset voltage is lower and the emission current is higher for MVSFEA than for conventional FEA. According to our results, the emission current density at a gate voltage of 380 V is 8.64×106 A/cm2 and emits about 58 nA/tip when the radius of the volcano aperture, a, is equal to 0.75 µ m. The emission current density of MVSFEAs for a=0.75 µ m is 37.9-fold larger in magnitude than that of a=0 µ m owing to the larger value of β for MVSFEAs.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-08-15
著者
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Yang Su-hua
Department Of Electrical Engineering National Cheng Kung University
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Yokoyama Meiso
Department Of Electrical Engineering National Cheng Kung University
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Yokoyama Meiso
Department of Electrical Engineering, National Cheng Kung University, 1 University Road,
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Yang Su-Hua
Department of Electrical Engineering, National Cheng Kung University, 1 University Road,
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