Output Power Enhancement of GaN-Based Light-Emitting Diodes Using Circular-Gear Structure
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概要
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In this study, we investigated the characteristics of circular-gear light-emitting diodes (LEDs) and compared them with those of triangular and rectangular LEDs. The emission optical powers of the circular-gear, triangular, and rectangular LEDs at an injection current of 20 mA are 4.6, 5.9, and 7.9 mW, respectively. The total radiant flux from the circular-gear LED was increased by 73 and 34% compared with those of the rectangular LED and triangular LED, respectively. Then, we fabricated a periodic-textured structure on the surface of a circular-gear LED, and it increased the light output power by 32% at an input current of 20 mA. We discovered a leakage current in the triangular sidewall. Therefore, the circular-gear structure demonstrated better extraction efficiency and an improvement in the leakage current. Furthermore, owing to the circular periphery of the circular-gear sidewall, the current was spread evenly. We also achieved a lower driver voltage than that of the triangular LED, which is about 0.68 V at 20 mA.
- 2011-03-25
著者
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KUAN Hon
Department of Electrical Engineering, Far East University
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Liang Tsair-Chun
Graduate Institute of Electro-Optical Engineering, National Kaohsiung First University of Science and Technology, Kaohsiung 811, Taiwan, R.O.C.
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Wu Chan-Shou
Graduate Institute of Electro-Optical Engineering, National Kaohsiung First University of Science and Technology, Kaohsiung 811, Taiwan, R.O.C.
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Cheng Wei-Chih
Graduate Institute of Electro-Optical Engineering, National Kaohsiung First University of Science and Technology, Kaohsiung 811, Taiwan, R.O.C.
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Kuan Hon
Department of Electrical Engineering Far East College, Tainan 744, Taiwan
関連論文
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- Output Power Enhancement of GaN-Based Light-Emitting Diodes Using Circular-Gear Structure
- Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
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