Improvement of uniformity in active-matrix light-emitting diodes

概要

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An approach to improve the drive-current uniformity of the low-temperature POly-Si(LTPS)thin film transistors (TFTs)applied to active-matrix organic light-emitting diodes(AMOLED)device was investigated. The non-uniformity feature of LTPS-TFTs is due to the fact that the grain boundaries and sizes of poly-Si are nearly non-controllable during the laser annealing process. In order to obtain the better uniformity of drive current and performance of gray-scale linearity for AMOLED pixels, we suggest that a resistor connected serially to the source terminal of the drive TFT should improve the non-uniformity feature dramatically. Alter measuring the I-V characteristics, a simulation process based on the basic circuit theory was proceeded to calculate the characteristics with a serially connected resistor. The calculated results revealed that the maximum current Variation could be changed from 45%(without a resistor)to 10%(with a serially connected resistor)when the threshold voltage of drive TFT varies 0.3V.
社団法人電子情報通信学会の論文
2000-10-13