Emission Mechanism of Mixed-Color InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes

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概要

• 論文の詳細を見る

• In this study, GaN-based light-emitting diodes (LEDs) were designed with a multi-quantum-well active region, including a yellow-green and a blue quantum well in each period. Photoluminescence (PL) and electroluminescence (EL) measurements revealed two emission bands (at $\lambda\sim 450$ and 560 nm) originating from the two well regions. The ratio of blue to yellow-green emission intensities changes with the excitation intensity. In EL, the intensity of the blue emission peak exceeds that of the yellow-green emission peak when a low DC current ($I\leqq 40$ mA) is applied. However, when a high pulsed current is applied ($I\geqq 100$ mA) to the LEDs, the intensity of the yellow-green band exceeds that of the blue band, because of the competition between carrier tunneling and band-to-band recombination.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-15

著者

• KUO Cheng-Huang

  Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University

• Lee Ming-Lun

  Department of Electro-Optical Engineering, Southern Taiwan University, Tainan 71005, Taiwan

• Sheu Jinn-Kong

  Advanced Optoelectronic Technology Center and Institute of Electro-Optical Science and Engineering, National Cheng-Kung University, Tainan 70101, Taiwan

• Lai Wei-Chi

  Advanced Optoelectronic Technology Center and Institute of Electro-Optical Science and Engineering, National Cheng-Kung University, Tainan 70101, Taiwan

• Kuo Cheng-Huang

  Institute of Optical Science, National Central University, 320 Taiwan

• Shei Shih-Chang

  Epitech Technology Cooperation, Hsin-Shi 744, Taiwan

• Tsai Chi-Ming

  Epitech Technology Cooperation, Hsin-Shi 744, Taiwan

• Lee Ming-Lun

  Department of Electro-Optical Engineering, Southern Taiwan University of Technology, Tainan county 710, Taiwan

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• Emission Mechanism of Mixed-Color InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes
• GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer

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