Application of Technology CAD in Process Development for High Performance Logic and System-on-Chip in IC Foundry (Special lssue on SISPAD'99)
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概要
- 論文の詳細を見る
The application of Technology CAD simulations for development of IC processes in foundry is presented. Examples include device design, Flash cell design and optical proximity correction for SRAM cell. The challenges of using TCAD tools in the IC foundry is also discussed.
- 社団法人電子情報通信学会の論文
- 2000-08-25
著者
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Sun Jack
Taiwan Semiconductor Manufacturing Co. R&d
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Sun J
Taiwan Semiconductor Manufacturing Co. Hsin‐chu Twn
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LIEW Boon-Khim
Taiwan Semiconductor Manufacturing Company, R&D Device Department
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Diaz Carlos
Taiwan Semiconductor Manufacturuing Company
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Liew Boon-khim
Taiwan Semiconductor Manufacturing Company R&d Device Department
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Liew B‐k
Taiwan Semiconductor Manufacturuing Company
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Wang Chih-Chiang
Taiwan Semiconductor Manufacturuing Company
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Wu Shien-Yang
Taiwan Semiconductor Manufacturuing Company
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Lin Yai-Fen
Taiwan Semiconductor Manufacturuing Company
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Kuo Di-Son
Taiwan Semiconductor Manufacturuing Company
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Lin Hua-Tai
Taiwan Semiconductor Manufacturuing Company
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Yen Anthony
Taiwan Semiconductor Manufacturuing Company
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Wu Shien-yang
Taiwan Semiconductor Manufacturing Co. R&d
関連論文
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- Analytical Model of Human Body Model Electrostatic Discharge Current Distribution and Novel Electrostatic Discharge Protection Structure
- A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)-NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors
- Application of Technology CAD in Process Development for High Performance Logic and System-on-Chip in IC Foundry (Special lssue on SISPAD'99)
- Bi-Mode Breakdown Test Methodology of Ultrathin Oxide
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- Novel Chip Standby Current Prediction Model and Ultrathin Gate Oxide Scaling Limit(Semiconductors)
- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- A Predistortion Technique for DFB Laser Diodes in Lightwave CATV Transmission
- Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2 nm) Silicon Dioxide
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- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors