A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)-NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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Hwang Heuy-liang
Department Of Electrical Engineering Tsing-hua University
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LEE Jian-Hsing
Taiwan Semiconductor Manufacturing Company, R&D Device Department
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HWANG Huey-Liang
Department of Electrical Engineering, Tsing-Hua University
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SHIH Jiaw-Ren
Department of Electrical Engineering, Tsing-Hua University
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LIEW B.
Taiwan Semiconductor Manufacturing Company, R & D No.9, Creation Rd. I Science Based Industrial Park
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Lee Joo-hyoung
Memory R&d Division Hynix Semiconductor Co.
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Liew B‐k
Taiwan Semiconductor Manufacturuing Company
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Lee J‐h
Wonkwang Univ. Chonpuk Kor
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Hwang Huey-liang
Department Of Electrical And Power Engineering National Tsing Hua University
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SHIH Jiaw-Ren
Department of Electrical Engineering, Tsing-Hua University:Taiwan Semiconductor Manufacturing Company, R & D No.9, Creation Rd. I Science Based Industrial Park
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LEE Jian-Hsing
Taiwan Semiconductor Manufacturing Company, R & D No.9, Creation Rd. I Science Based Industrial Park
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LIEW B.
Taiwan Semiconductor Manufacturing Company, R & D No.9, Creation Rd. I Science Based Industrial Park
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Shin Jiaw-Ren
Department of Electrical Engineering, Tsing-Hua University
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Liew B.K.
Taiwan Semiconductor Manufacturing Company, R & D No.9, Creation Rd. I Science Based Industrial Park
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